APTGT30TL601G APTGT30TL601G C rev1 october, 2012 www.microsemi.com 1-8 q1 to q4 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 50 i c continuous collector current t c = 80c 30 i cm pulsed collector current t c = 25c 60 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 90 w rbsoa reverse bias safe operating area t j = 150c 60a @ 550v these devices are sensitive to electrostatic discharge. prope r handling procedures should be follow ed. see application note apt0502 on www.microsemi.com all multiple inputs and outputs must be shorted together 5/6 ; 9/10 v ces = 600v i c = 30a @ tc = 80c application ? solar converter ? uninterruptible power supplies features ? trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? very low stray inductance ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant three level inverter trench + field stop igbt3 power module downloaded from: http:///
APTGT30TL601G APTGT30TL601G C rev1 october, 2012 www.microsemi.com 2-8 all ratings @ t j = 25c unless otherwise specified q1 to q4 electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 30a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 400a 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 300 na q1 to q4 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 1600 c oes output capacitance 110 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 50 pf q g gate charge v ge =15v, i c =30a v ce =300v 0.3 c t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 30a r g = 10 ? 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 30a r g = 10 ? 60 ns t j = 25c 0.16 e on turn-on switching energy t j = 150c 0.3 mj t j = 25c 0.7 e off turn-off switching energy v ge = 15v v bus = 300v i c = 30a r g = 10 ? t j = 150c 1.05 mj i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 150 a r thjc junction to case thermal resistance 1.6 c/w downloaded from: http:///
APTGT30TL601G APTGT30TL601G C rev1 october, 2012 www.microsemi.com 3-8 cr1 to cr4 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 150 i rm maximum reverse leakage current v r =600v t j = 150c 350 a i f dc forward current tc = 80c 20 a t j = 25c 1.6 2 v f diode forward voltage i f = 20a v ge = 0v t j = 150c 1.5 v t j = 25c 100 t rr reverse recovery time t j = 150c 150 ns t j = 25c 1.1 q rr reverse recovery charge t j = 150c 2.3 c t j = 25c 0.23 e rr reverse recovery energy i f = 20a v r = 300v di/dt =1600a/s t j = 150c 0.50 mj r thjc junction to case thermal resistance 3.25 c/w cr5 & cr6 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 150 i rm maximum reverse leakage current v r =600v t j = 150c 350 a i f dc forward current tc = 80c 30 a t j = 25c 1.6 2 v f diode forward voltage i f = 30a v ge = 0v t j = 150c 1.5 v t j = 25c 100 t rr reverse recovery time t j = 150c 150 ns t j = 25c 1.5 q rr reverse recovery charge t j = 150c 3.1 c t j = 25c 0.34 e rr reverse recovery energy i f = 30a v r = 300v di/dt =1800a/s t j = 150c 0.75 mj r thjc junction to case thermal resistance 2.45 c/w thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 80 g downloaded from: http:///
APTGT30TL601G APTGT30TL601G C rev1 october, 2012 www.microsemi.com 4-8 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com q1 to q4 typical performance curve hard switching 0 20 40 60 80 0 1 02 03 04 0 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =10 ? t j =150c t c =85c operating frequency vs collector current downloaded from: http:///
APTGT30TL601G APTGT30TL601G C rev1 october, 2012 www.microsemi.com 5-8 output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 10 20 30 40 50 60 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =150c 0 10 20 30 40 50 60 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 0.5 1 1.5 2 0 102030405060 i c (a) e (mj) v ce = 300v v ge = 15v r g = 10 ? t j = 150c eon eon eoff 0 0.5 1 1.5 2 2.5 0 10203040506070 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 30a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 10 20 30 40 50 60 70 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =10 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) downloaded from: http:///
APTGT30TL601G APTGT30TL601G C rev1 october, 2012 www.microsemi.com 6-8 cr1 to cr4 typical performance curve energy losses vs collector current 0 0.2 0.4 0.6 0.8 0 1 02 03 04 0 i f (a) e (mj) v ce = 300v r g = 12 ? t j = 150c 0 0.125 0.25 0.375 0.5 10 30 50 70 gate resistance (ohms) e (mj) v ce = 300v i c = 20a t j = 150c switching energy losses vs gate resistance forward characteristic of diode t j =25c t j =150c 0 5 10 15 20 25 30 35 40 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.5 1 1.5 2 2.5 3 3.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) downloaded from: http:///
APTGT30TL601G APTGT30TL601G C rev1 october, 2012 www.microsemi.com 7-8 cr5 & cr6 typical performance curve energy losses vs collector current 0 0.25 0.5 0.75 1 0 102030405060 i f (a) e (mj) v ce = 300v v ge = 15v r g = 10 ? t j = 150c 0 0.25 0.5 0.75 1 0 10203040506070 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 30a t j = 150c switching energy losses vs gate resistance maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.5 1 1.5 2 2.5 3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) forward characteristic of diode t j =25c t j =150c 0 10 20 30 40 50 60 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) downloaded from: http:///
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